𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The preparation of flat H–Si(111) surfaces in 40% NH4F revisited

✍ Scribed by Philippe Allongue; Catherine Henry de Villeneuve; Sylvie Morin; Rabah Boukherroub; Danial D.M. Wayner

Book ID
108317579
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
458 KB
Volume
45
Category
Article
ISSN
0013-4686

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Etching mechanism and atomic structure o
Etching mechanism and atomic structure of HSi(111) surfaces prepared in NH4F
✍ P. Allongue; V. Kieling; H. Gerischer 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 943 KB

The atomic structure of H-terminated Si( 111) surfaces is investigated by in-situ STM and electrochemical measurements in NH,F solutions of 2 < pH < 8. Etch rate measurements show only a slight pH-dependence between pH 2 and 14, when including alkaline solutions. Electrochemical results indicate tha