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The incorporation of oxygen impurities in semiconductor silicon in chemical vapour deposition

✍ Scribed by K. Bartsch; E. Wolf


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
302 KB
Volume
17
Category
Article
ISSN
0232-1300

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A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroΓ‘uoric acid (BHF) were investigated using Ruth