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The importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contacts

✍ Scribed by M.E. Aydín; K. Akkílíç; T. Kílíçoğlu

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
230 KB
Volume
352
Category
Article
ISSN
0921-4526

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The electrical characterization of the In/p-Si Schottky diode has been investigated by conductance and capacitance-frequency techniques. The characteristic parameters of the interface states have been determined from the capacitance-frequency and conductance-frequency measurements. The capacitance o