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The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE

✍ Scribed by A. S. Brown; M. Losurdo; T. H. Kim; M. M. Giangregorio; S. Choi; M. Morse; P. Wu; P. Capezzuto; G. Bruno

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 499 KB
Volume: 40
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.200410475

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