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The formation of silicon nanocrystals in SiO2layers by the implantation of Si ions with intermediate heat treatments

✍ Scribed by G. A. Kachurin; V. A. Volodin; D. I. Tetel’baum; D. V. Marin; A. F. Leier; A. K. Gutakovskii; A. G. Cherkov; A. N. Mikhailov

No coin nor oath required. For personal study only.

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