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Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

✍ Scribed by G.G. Ross; R. Smirani; V. Levitcharsky; Y.Q. Wang; G. Veilleux; R.G. Saint-Jacques


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
265 KB
Volume
230
Category
Article
ISSN
0168-583X

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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi