The evolution of diffusion barriers in copper metallization
β Scribed by Chiapyng Lee; Yu-Lin Kuo
- Publisher
- The Minerals, Metals & Materials Society
- Year
- 2007
- Tongue
- English
- Weight
- 1012 KB
- Volume
- 59
- Category
- Article
- ISSN
- 1047-4838
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Electroless deposited Co(W,P) thin films were evaluated as diffusion barriers for copper metallization. Capacitance versus time measurements of MOS structures as well as SIMS depth profiles indicate that 30-nm-thick films can function as effective barriers against copper diffusion after thermal trea
An amorphous Ta-Zr binary alloy diffusion barrier was studied in the Cu metallization. A Cu/Ta 50 Zr 50 /SiO 2 /Si stack with 50 nm thick amorphous film was prepared by co-sputtering can effectively suppress the penetration of Cu atoms into substrate upon annealing up to 650 Β°C. Examining the therma