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In situ formation of diffusion barriers in thin film metallization systems

✍ Scribed by P.H. Holloway; C.C. Nelson

Book ID
107862223
Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
165 KB
Volume
35
Category
Article
ISSN
0040-6090

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An amorphous Ta-Zr binary alloy diffusion barrier was studied in the Cu metallization. A Cu/Ta 50 Zr 50 /SiO 2 /Si stack with 50 nm thick amorphous film was prepared by co-sputtering can effectively suppress the penetration of Cu atoms into substrate upon annealing up to 650 Β°C. Examining the therma