𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The electrical properties of phosphorus doped silicon layers obtained by ion implantation through a passivating oxide

✍ Scribed by J. Verjans; R. van Overstraeten; H. Pattyn; R. de Keersmaecker


Book ID
107856065
Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
399 KB
Volume
16
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES