✦ LIBER ✦
The electrical properties of phosphorous doped silicon layers obtained by ion implantation through a passivating oxide : J. Verjans, R. Van Overstraeten, H. Patt and R. De Keersmaecker. Solid St. Electron. 16 (1973), p. 779
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 169 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0026-2714
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