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Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus

✍ Scribed by N. A. Sobolev; A. M. Emel’yanov; V. V. Zabrodskiĭ; N. V. Zabrodskaya; V. L. Sukhanov; E. I. Shek


Book ID
111443795
Publisher
Springer
Year
2007
Tongue
English
Weight
198 KB
Volume
41
Category
Article
ISSN
1063-7826

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