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The electrical properties of metal-oxide-semiconductor devices fabricated on the chemically etched n-InP substrate

✍ Scribed by H. Çetin; E. Ayyildiz

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 477 KB
Volume: 253
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2006.12.110

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