Effect of substrate temperature on the electrical and optical properties of reactively evaporated indium tin oxide films

✍ Scribed by N. Balasubramanian; A. Subrahmanyam

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 175 KB
• Volume: 1
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(88)90008-6

✦ Synopsis

Electrical and optical properties of indium tin oxide films coated on soda-lime glass substrates have been investigated as a function of substrate temperature (~ = 250-450 °C). Highly conducting (p-~8xlO -4 £2 cm) and transparent (T-~90%) films have been obtained at a substrate temperature of 350 °C and above. An increase in carrier concentration accompanied by a widening in optical band gap (the Burstein-Moss shift) have been observed with increasing substrate temperature. Enhancement of carrier concentration at higher substrate temperatures may be attributed to the presence of higher valency states of tin (Sn 4+) occupying the indium sublattice of indium oxide.