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Effect of annealing on electrical and optical properties of RF magnetron sputtered indium tin oxide films

✍ Scribed by Wen-Fa Wu; Bi-Shiou Chiou


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
526 KB
Volume
68
Category
Article
ISSN
0169-4332

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## Abstract Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and crystalline silicon (111) substrates held at room temperature by sputtering of tantalum in an oxygen partial pressure of 1x10^‐4^ mbar. The films were annealed in air for an hour in the