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Effect of external gettering with porous silicon on the electrical properties of Metal–Oxide–Silicon devices

✍ Scribed by N. Khedher; A. Ben Jaballah; M. Bouaïcha; H. Ezzaouia; R. Bennnaceur

Publisher
Elsevier
Year
2009
Tongue
English
Weight
280 KB
Volume
2
Category
Article
ISSN
1875-3892

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The electrical current of porous silicon (PS) has been measured while several treatments are made to the samples. When the samples are exposed to air, the DC current increases or decreases depending on the surface conditions of the samples. These results, found to be caused by water vapors in air, c