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Surface effects on the electrical conduction of porous silicon

✍ Scribed by Suk-Ho Choi; Geun-Woo Lee

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
212 KB
Volume
20
Category
Article
ISSN
0749-6036

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✦ Synopsis

The electrical current of porous silicon (PS) has been measured while several treatments are made to the samples. When the samples are exposed to air, the DC current increases or decreases depending on the surface conditions of the samples. These results, found to be caused by water vapors in air, can be explained based upon the adsorbate-induced surface band bending. Photon soaking in air alters the direction of current change after air exposure and Fourier Transform Infrared Spectra show a redistribution of surface adsorbates after photon soaking in air. This indicates that photon soaking in air can cause a change in the band bending on the surface of PS.

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