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The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs

✍ Scribed by Moran, Jeffrey T.; McClory, John W.; Petrosky, James C.; Farlow, Gary C.


Book ID
120373448
Publisher
IEEE
Year
2009
Tongue
English
Weight
492 KB
Volume
56
Category
Article
ISSN
0018-9499

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera