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The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs

✍ Scribed by Doo-Hyeb Youn; Jae-Hoon Lee; Kumar, V.; Kyu-Seok Lee; Jung-Hee Lee; Adesida, I.

Book ID
114617403
Publisher
IEEE
Year
2004
Tongue
English
Weight
245 KB
Volume
51
Category
Article
ISSN
0018-9383

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