Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

✍ Scribed by Gillespie, J.K.; Fitch, R.C.; Sewell, J.; Dettmer, R.; Via, G.D.; Crespo, A.; Jenkins, T.J.; Luo, B.; Mehandru, R.; Kim, J.; Ren, F.; Gila, B.P.; Onstine, A.H.; Abernathy, C.R.; Pearton, S.J.

• Book ID: 115497157
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 220 KB
• Volume: 23
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2002.802592