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The effects of H2-O2-plasma treatment on the characteristics of polysilicon thin-film transistors

✍ Scribed by Horng Nan Chern; Chung Len Lee; Tan Fu Lei

Book ID
114535475
Publisher
IEEE
Year
1993
Tongue
English
Weight
612 KB
Volume
40
Category
Article
ISSN
0018-9383

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## Abstract The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H~2~O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This w