Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO 2 film on the silicon substrate was found to retard significantly the formation of Ni 2 Si, NiSi and NiSi 2 on (0 0 1)Si. On the other ha
✦ LIBER ✦
The effect of thermal treatments on the local geometry around indium in In and In + C high dose implanted Si
✍ Scribed by F. d’Acapito; Y. Shimizu; S. Scalese; M. Italia; P. Alippi; S. Grasso
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 348 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0168-583X
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