✦ LIBER ✦

Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si

✍ Scribed by L.W. Cheng; H.M. Lo; S.L. Cheng; L.J. Chen; C.J. Tsai

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 602 KB
Volume: 409
Category: Article
ISSN: 0921-5093
DOI: 10.1016/j.msea.2005.05.106

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✦ Synopsis

Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO 2 film on the silicon substrate was found to retard significantly the formation of Ni 2 Si, NiSi and NiSi 2 on (0 0 1)Si. On the other hand, tensile stress induced by backside Si 3 N 4 and CoSi 2 films was found to enhance the formation of nickel silicides on (0 0 1)Si. The thickness of growing nickel silicide thin films was found to increase and decrease with tensile and compressive stress level, respectively. The effects of stress on the formation and growth of nickel silicides are attributed to the variation in the diffusion of nickel atoms through Ni/Si and nickel silicide/Si interfaces.

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Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0&#xa0;0&#xa0;1)Si

✦ Synopsis

Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si