## Abstract Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80โ120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion
The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition
โ Scribed by Li-Jian Meng; Jinsong Gao; M.P. dos Santos; Xiaoyi Wang; Tongtong Wang
- Book ID
- 108289753
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 572 KB
- Volume
- 516
- Category
- Article
- ISSN
- 0040-6090
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Indium tin oxide (ITO) films were produced by low-energy oxygen ion beam assisted electron-beam evaporation. The dependence of surface morphology, electrical and optical properties on evaporation rate, oxygen ion beam energy and density, as well as substrate temperatures was characterized by atomic
The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (1 1 1), Si (1 00) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disord
## Abstract Indium tin oxide (ITO) thin films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique at different deposition rates (0.1โ0.3โnm/s). The effects of the deposition rate on the structural, optical and electrical properties of the deposite