𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

✍ Scribed by J. H. Edgar; C. A. Carosella; C. R. Eddy; D. T. Smith

Publisher
Springer US
Year
1996
Tongue
English
Weight
709 KB
Volume
7
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.

✦ Synopsis

The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (1 1 1), Si (1 00) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disorder in the AIN films increased as determined by X-ray diffraction, FTIR and Raman spectroscopy. The preferred orientation of the film's c-axis changed from completely normal to the film at 100 V, to a mixture of normal and in the plane of the film at 200V. For AIN films deposited under the same conditions, the films were more highly oriented on sapphire (000 1) than in Si (1 1 1). The hardness of the films increased from 18.2 to 23.7 GPa with the nitrogen-beam voltage, and possible reasons for this change in hardness are considered.

πŸ“œ SIMILAR VOLUMES

Tribological and mechanical properties o
Tribological and mechanical properties of carbon nitride thin coating prepared by ion-beam-assisted deposition
✍ Andrei Khurshudov; Koji Kato; Daisuke Sawada πŸ“‚ Article πŸ“… 1996 πŸ› Springer US 🌐 English βš– 451 KB

Carbon nitride thin films may become good competitors for diamond-like carbon, due to their high hardness, high wear resistance, and low friction coefficient. At present, there are only a few studies of the effect of CNx coating hardness and internal stress on its tribological properties, such as co

Effect of the deposition rate on ITO thi
Effect of the deposition rate on ITO thin film properties prepared by ion beam assisted deposition (IBAD) technique
✍ Meng, Li-Jian ;Teixeira, V. ;dos Santos, M. P. πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 507 KB

## Abstract Indium tin oxide (ITO) thin films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique at different deposition rates (0.1–0.3 nm/s). The effects of the deposition rate on the structural, optical and electrical properties of the deposite