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The effect of polysilicon doping on the reverse short-channel effect in sub-quarter micron NMOS transistors

✍ Scribed by Sadovnikov, A.; Kalnitsky, A.; Bergemont, A.; Hopper, P.


Book ID
111910783
Publisher
IEEE
Year
2001
Tongue
English
Weight
107 KB
Volume
48
Category
Article
ISSN
0018-9383

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Experimental study on isolation edge eff
✍ Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 265 KB

We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati