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Physical mechanism of the “reverse short-channel effect” in MOS transistors

✍ Scribed by S.T. Hsu; I.H. Kalish; K. Suzuki; R. Kawabata; H. Shibayama

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
297 KB
Volume
34
Category
Article
ISSN
0038-1101

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## Abstract The degradation produced by channel hot‐carrier (CHC) on short channel transistors with high‐k dielectric has been analyzed. For short channel transistors (__L__<0.15 µm), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the ‘classical’ __V__~G~=__V__