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Numerical study of the effect of the doping profile on the threshold voltage of narrow-channel MOS transistor

✍ Scribed by Asen M. Asenov; Evgeny N. Stefanov; Bozhidar Z. Antov

Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 905 KB
Volume: 30
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(87)90057-8

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