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[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - The effect of source/drain processing on the reverse short channel effect of deep sub-micron bulk and SOI NMOSFETs

โœ Scribed by Crowder, S.W.; Rousseau, P.M.; Snyder, J.P.; Scott, J.A.; Griffin, P.B.; Plummer, J.D.


Book ID
115533520
Publisher
IEEE
Year
1995
Weight
416 KB
Volume
0
Category
Article
ISBN-13
9780780327009

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