๐”– Bobbio Scriptorium
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[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Evidence of channel profile modification due to implantation damage studied by a new method, and its implication to reverse short channel effects of nMOSFETs

โœ Scribed by Nishi, K.; Matsuhashi, H.; Ochiai, T.; Kasai, M.; Nishikawa, T.


Book ID
111910859
Publisher
IEEE
Year
1995
Weight
204 KB
Volume
0
Category
Article
ISBN-13
9780780327009

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