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The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy

✍ Scribed by B. Bobrovnikova; M. D. Vilisova; I. V. Ivonin; L. G. Lavrent'yeva; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin; S. V. Subach

No coin nor oath required. For personal study only.

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