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Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers

✍ Scribed by L. G. Lavrent'eva; M. D. Vilisova; V. V. Preobrazhenskii; V. V. Chaldyshev

No coin nor oath required. For personal study only.

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