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Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures

✍ Scribed by G. B. Galiev; R. M. Imamov; B. K. Medvedev; V. G. Mokerov; É. Kh. Mukhamedzhanov; É. M. Pashaev; V. B. Cheglakov

No coin nor oath required. For personal study only.

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