The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy

✍ Scribed by A. A. Tonkikh; G. E. Cirlin; N. K. Polyakov; Yu. B. Samsonenko; V. M. Ustinov; N. D. Zakharov; P. Werner; V. G. Talalaev; B. V. Novikov

• Book ID: 111443529
• Publisher: Springer
• Year: 2006
• Tongue: English
• Weight: 371 KB
• Volume: 40
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782606050137