We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo
β¦ LIBER β¦
Abnormal optical behaviour of InAsSb quantum dots grown on GaAs substrate by molecular beam epitaxy
β Scribed by J. Rihani; N. Ben Sedrine; V. Sallet; J.C. Harmand; M. Oueslati; R. Chtourou
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 674 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0928-4931
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Antimony incorporation in InAs quantum d
β
J. Rihani; V. Sallet; H.J. Christophe; M. Oueslati; R. Chtourou
π
Article
π
2008
π
Elsevier Science
π
English
β 272 KB
Effect of annealing on electrical proper
β
Xiaoming Liu; Hongtao Li; Fengyun Guo; Meicheng Li; Liancheng Zhao
π
Article
π
2009
π
Elsevier Science
π
English
β 266 KB
Structural and optical properties of InA
β
A. Pulzara-Mora; E. Cruz-HernΓ‘ndez; J.S. Rojas-RamΓrez; V.H. MΓ©ndez-GarcΓa; M. L
π
Article
π
2008
π
Elsevier Science
π
English
β 416 KB
Fabrication of quantum wires and dots on
β
T. Takebe; T. Watanabe; K. Fujita
π
Article
π
1998
π
Elsevier Science
π
English
β 195 KB
Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [
Optical properties of doped GaN grown by
β
T.S. Cheng; S.E. Hooper; L.C. Jenkins; C.T. Foxon; D.E. Lacklison; J.D. Dewsnip;
π
Article
π
1996
π
Elsevier Science
π
English
β 281 KB
Submonolayer and supermonolayer of InAs
β
K. Okamoto; T. Umezaki; T. Okada; R. Shinohara
π
Article
π
1995
π
Elsevier Science
π
English
β 339 KB