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The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane

โœ Scribed by Y.-J. Zheng; J.R. Engstrom; J. Zhang; A. Schellinger; B.A. Joyce

Book ID
117215246
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
244 KB
Volume
470
Category
Article
ISSN
0039-6028

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โœ Akitaka Yoshigoe; Shinya Hirano; Tsuneo Urisu ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 96 KB ๐Ÿ‘ 2 views

Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)assisted gas source molecular beam epitaxy (SR-GSMBE) using Si 2 H 6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth