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Study of growth kinetics in silicon gas source molecular beam epitaxy with disilane using RHEED intensity oscillations

โœ Scribed by S. Butzke; K. Werner; J. Trommel; S. Radelaar; P. Balk

Book ID
107864282
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
431 KB
Volume
228
Category
Article
ISSN
0040-6090

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