We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton bin
The effect of barrier structure on the performance of double barrier quantum well infra-red photodetectors
β Scribed by K.L. Tsai; C.P. Lee; P.C. Chen; J.S. Tsang; C.M. Tsai; J.C. Fan
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 319 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0038-1101
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