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The Effect of Both Abrupt and Strong Enhancement of Current in the Semiconductor System: Schottky Barrier Containing a Double Barrier Resonant-Tunneling Structure

✍ Scribed by Korol, A.M. ;Tretyak, O.V. ;Sheka, D.I.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
103 KB
Volume
188
Category
Article
ISSN
0031-8965

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