The effect of amorphous silicon capping on titanium during TiSi2formation by RTA
β Scribed by S. W. Kang; S. C. Park; S. Chun
- Book ID
- 104799462
- Publisher
- Springer
- Year
- 1990
- Tongue
- English
- Weight
- 404 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0022-2461
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π SIMILAR VOLUMES
The formation of titanium disilicide (TiSi ) from Ti deposited using ionized metal plasma under different 2 deposition conditions has been investigated. It is shown that deposition at elevated substrate temperature (4508C) enhances the formation of the low-resistivity C54 TiSi , especially in patter
When a Ta layer is deposited at the Si-Ti interface a new phase has been detected, i.e., the TiSi C40. The 2 C40-C54 transformation kinetics and the film morphology are consistent with an increase of the nucleation density with respect to the C49-C54 transition. The activation energies for the nucle