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The effect of a parasitic potential barrier on the neutral base recombination current of Si/SiGe/Si DHBTs

✍ Scribed by Sung-Ihl Kim; Byung R. Ryum; Sang-Won Kang; Wonchan Kim


Book ID
103395003
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
300 KB
Volume
37
Category
Article
ISSN
0038-1101

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Effect of Ge content and profile in the
✍ Mukul K. Das; N. R. Das; P. K. Basu πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well