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Base currents of Si/SiGe/Si HBT in dependence on the processing conditions

✍ Scribed by D. Knoll; G. Fischer; K.E. Ehwald; B. Heinemann; P. Schley; H. Zeindl; B. Tillack; T. Morgenstern; A. Wolff

No coin nor oath required. For personal study only.

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