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The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmaxin SiGe hetero-junction bipolar transistors

✍ Scribed by Seung-Yun Lee; Hong-Seung Kim; Sang-Heung Lee; Kyu-Hwan Shim; Jin-Yeong Kang; Min-Kyu Song

Book ID: 110304643
Publisher: Springer US
Year: 2001
Tongue: English
Weight: 847 KB
Volume: 12
Category: Article
ISSN: 0957-4522
DOI: 10.1023/a:1011843517164

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