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Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP

✍ Scribed by Onur Esame; Yasar Gurbuz; Ibrahim Tekin; Ayhan Bozkurt


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
588 KB
Volume
35
Category
Article
ISSN
0026-2692

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