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The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

✍ Scribed by Gruhle, A.


Book ID
114535648
Publisher
IEEE
Year
1994
Tongue
English
Weight
600 KB
Volume
41
Category
Article
ISSN
0018-9383

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