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The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor

✍ Scribed by S.C.P. Rodrigues; Y.R.V. Araújo; G.M. Sipahi; L.M.R. Scolfaro; E.F. da Silva Jr.

Book ID: 103819550
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 370 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.07.015

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