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Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates

✍ Scribed by V. I. Vdovin; M. G. Mil’vidskii; T. G. Yugova

Book ID: 110144065
Publisher: SP MAIK Nauka/Interperiodica
Year: 2005
Tongue: English
Weight: 63 KB
Volume: 50
Category: Article
ISSN: 1063-7745
DOI: 10.1134/1.2049407

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