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The effect of substrate relaxation on the introduction of misfit dislocations in misfitting epitaxial layers

✍ Scribed by Basson, J. H. ;Booyens, H.


Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
515 KB
Volume
64
Category
Article
ISSN
0031-8965

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Cathodoluminescence imaging of misfit di
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Cathodoluminescence (CL) spectroscopy and CL imaging have been used to characterize misfit dislocations in as-grown Si/SiGe epilayers and those contaminated with transition metal. The misfit dislocations in the as-grown layers showed no radiative recombination (D bands) but only the band exciton fea