✦ LIBER ✦

The introduction of misfit dislocations in HgCdTe epitaxial layers

✍ Scribed by Basson, J. H. ;Booyens, H.

Publisher: John Wiley and Sons
Year: 1983
Tongue: English
Weight: 438 KB
Volume: 80
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210800231

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The effect of substrate relaxation on th

The effect of substrate relaxation on the introduction of misfit dislocations in misfitting epitaxial layers

✍ Basson, J. H. ;Booyens, H. 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 515 KB

Spontaneous nucleation of misfit disloca

Spontaneous nucleation of misfit dislocations in strained epitaxial layers

✍ Perovic, D. D. ;Houghton, D. C. 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 453 KB

The energy of systems of misfit dislocat

The energy of systems of misfit dislocations in epitaxial strained layers

✍ A. Atkinson; S.C. Jain 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 408 KB

Double-crystal topographic investigation

Double-crystal topographic investigation of misfit dislocations in silicon epitaxial layers

✍ Wierzchowski, W. 📂 Article 📅 1985 🏛 John Wiley and Sons 🌐 English ⚖ 825 KB

A calculation of the energy of misfit di

A calculation of the energy of misfit dislocations and the critical thickness in graded epitaxial layers

✍ C.A.B. Ball; C. Laird 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 381 KB

Cathodoluminescence imaging of misfit di

Cathodoluminescence imaging of misfit dislocations in Si/SiGe epitaxial layers: the influence of transition metal contamination

✍ V. Higgs; T.Q. Zhou; G.A. Rozgonyi 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 443 KB

Cathodoluminescence (CL) spectroscopy and CL imaging have been used to characterize misfit dislocations in as-grown Si/SiGe epilayers and those contaminated with transition metal. The misfit dislocations in the as-grown layers showed no radiative recombination (D bands) but only the band exciton fea