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CuxLi1-xInTe2 Epitaxial layers on AIIIBV substrates and the influence of lattice misfit

✍ Scribed by B. Schumann; G. Nolze; G. Kühn

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
286 KB
Volume
151
Category
Article
ISSN
0040-6090

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For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi