๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Influence of misfit dislocations on the alignment of epitaxial thin films

โœ Scribed by J.W. Matthews


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
252 KB
Volume
12
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Cathodoluminescence imaging of misfit di
โœ V. Higgs; T.Q. Zhou; G.A. Rozgonyi ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 443 KB

Cathodoluminescence (CL) spectroscopy and CL imaging have been used to characterize misfit dislocations in as-grown Si/SiGe epilayers and those contaminated with transition metal. The misfit dislocations in the as-grown layers showed no radiative recombination (D bands) but only the band exciton fea

Influence of thickness on the epitaxial
โœ C. Girardot; F. Conchon; A. Boulle; P. Chaudouet; N. Caillault; J. Kreisel; R. G ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 409 KB

SmNiO 3 thin films have been prepared by liquid injection Metal Organic Chemical Vapour Deposition on SrTiO 3 (100) and LaAlO 3 (100) single crystalline substrates. The influence of the film thickness on the epitaxial stabilisation has been studied for both substrates by X-ray diffraction and Atomic