Influence of misfit dislocations on the alignment of epitaxial thin films
โ Scribed by J.W. Matthews
- Publisher
- Elsevier Science
- Year
- 1972
- Tongue
- English
- Weight
- 252 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0040-6090
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๐ SIMILAR VOLUMES
Cathodoluminescence (CL) spectroscopy and CL imaging have been used to characterize misfit dislocations in as-grown Si/SiGe epilayers and those contaminated with transition metal. The misfit dislocations in the as-grown layers showed no radiative recombination (D bands) but only the band exciton fea
SmNiO 3 thin films have been prepared by liquid injection Metal Organic Chemical Vapour Deposition on SrTiO 3 (100) and LaAlO 3 (100) single crystalline substrates. The influence of the film thickness on the epitaxial stabilisation has been studied for both substrates by X-ray diffraction and Atomic